Some embodiments relate to an integrated circuit including fin field effect transistors (FinFETs) thereon. The integrated circuit includes first and second active fin regions having a first conductivity type and spaced apart from one another. A gate dielectric layer is disposed over the first and second active fin regions. First and second gate electrodes are disposed over the first and second active fin regions, respectively. The first and second gate electrodes are also disposed over the gate dielectric layer. The first and second gate electrodes are electrically coupled together and are electrically separated from the first and second active fin regions by the gate dielectric layer. The first gate electrode is made of a first metal having a first workfunction, and the second gate electrode is made of a second metal having a second workfunction that differs from the first workfunction.