Invention Grant
- Patent Title: Local interconnect structures for high density
- Patent Title (中): 本地互连结构，用于高密度
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Application No.: US13829864Application Date: 2013-03-14
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Publication No.: US09024418B2Publication Date: 2015-05-05
- Inventor: John Jianhong Zhu , Giridhar Nallapati , PR Chidambaram
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L23/528 ; H01L21/768 ; H01L21/8234 ; H01L27/088
Abstract:
A local interconnect structure is provided that includes a gate-directed local interconnect coupled to an adjacent gate layer through a diffusion-directed local interconnect.
Public/Granted literature
- US20140264629A1 LOCAL INTERCONNECT STRUCTURES FOR HIGH DENSITY Public/Granted day:2014-09-18
Information query
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