Invention Grant
US09024428B2 Semiconductor device and stacked semiconductor device 有权
半导体器件和堆叠半导体器件

Semiconductor device and stacked semiconductor device
Abstract:
A semiconductor device includes a package substrate, and a stack of semiconductor chips over the package substrate, each of the semiconductor chips including first and second surfaces, each of the semiconductor chips including a first through electrode that extends through each of the semiconductor chips, a first surface electrode positioned on the first surface of each of the semiconductor chips, the first surface electrode being coupled to a first end of the first through electrode, a second surface electrode positioned on the second surface of each of the semiconductor chips, the second surface electrode being coupled to a second end of the first through electrode, a second through electrode that extends through each of the semiconductor chips, the second through electrode having third and fourth ends, and a third surface electrode positioned on the second surface of the first semiconductor chip.
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