Invention Grant
US09024449B2 Thin-film transistor element and method for producing same, organic EL display element and method for producing same, and organic EL display device
有权
薄膜晶体管元件及其制造方法，有机EL显示元件及其制造方法以及有机EL显示器件
- Patent Title: Thin-film transistor element and method for producing same, organic EL display element and method for producing same, and organic EL display device
- Patent Title (中): 薄膜晶体管元件及其制造方法，有机EL显示元件及其制造方法以及有机EL显示器件
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Application No.: US14059559Application Date: 2013-10-22
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Publication No.: US09024449B2Publication Date: 2015-05-05
- Inventor: Yuko Okumoto , Akihito Miyamoto , Takaaki Ukeda
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Greenblum & Bernstein, P.L.C.
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/4763 ; H01L51/52 ; H01L27/12 ; H01L27/32 ; H01L51/05 ; H01L51/56
Abstract:
A thin film transistor element includes: a gate electrode; a source electrode and a drain electrode; an insulating layer; partition walls; and an organic semiconductor layer. The partition walls define a first aperture. Within the first aperture, at least a part of the source electrode and at least a part of the drain electrode are in contact with the semiconductor layer. The partition walls have side face portions facing the first aperture, and some of the side face portions have gentler slopes than the rest of the side face portions.
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