A method for manufacturing a semiconductor device includes a first photolithography step of forming a first device pattern corresponding to a first pattern, and a plurality of alignment marks corresponding to a plurality of marks, upon a step of exposing the entire device region in one shot using a first mask including the first pattern and the plurality of marks, and a second photolithography step of, after the first photolithography step, forming second device patterns respectively corresponding to second patterns in a plurality of divided regions which form the device region, upon steps of individually exposing the plurality of divided regions using second masks each including the second pattern corresponding thereto.