Invention Grant
- Patent Title: Hall sensors having forced sensing nodes
- Patent Title (中): 霍尔传感器具有强制传感节点
-
Application No.: US13621336Application Date: 2012-09-17
-
Publication No.: US09024629B2Publication Date: 2015-05-05
- Inventor: Mario Motz
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Associates, LLC
- Main IPC: G01R33/07
- IPC: G01R33/07

Abstract:
Embodiments relate to forced spinning Hall sensors. In embodiments, forced Hall sensors can provide reduced residual offset, lower current consumption and improved or complete rejection of nonlinear backbias effects when compared with conventional approaches.
Public/Granted literature
- US20130069641A1 HALL SENSORS HAVING FORCED SENSING NODES Public/Granted day:2013-03-21
Information query