Invention Grant
- Patent Title: Input buffer circuit
- Patent Title (中): 输入缓冲电路
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Application No.: US13840510Application Date: 2013-03-15
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Publication No.: US09024653B2Publication Date: 2015-05-05
- Inventor: Dong Hwan Kim , Sung Man Pang
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon, Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon, Gyunggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2012-0121227 20121030
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K19/0948

Abstract:
There is provided an input buffer circuit having hysteresis characteristics. The input buffer circuit includes: a first operating unit performing a NOR operation on an input signal and a first signal; a second operating unit performing a NAND operation on the input signal and a second signal; and an inverting unit inverting outputs of the first and second operating units to generate a second signal and a first signal, respectively, wherein reference levels of the first and second operating units determining a high or low level of the input signal are set to be different.
Public/Granted literature
- US20140118025A1 INPUT BUFFER CIRCUIT Public/Granted day:2014-05-01
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