Invention Grant
US09024657B2 Architectural floorplan for a structured ASIC manufactured on a 28 NM CMOS process lithographic node or smaller
有权
在28 NM CMOS工艺光刻节点上制造的结构化ASIC的建筑平面图
- Patent Title: Architectural floorplan for a structured ASIC manufactured on a 28 NM CMOS process lithographic node or smaller
- Patent Title (中): 在28 NM CMOS工艺光刻节点上制造的结构化ASIC的建筑平面图
-
Application No.: US13649529Application Date: 2012-10-11
-
Publication No.: US09024657B2Publication Date: 2015-05-05
- Inventor: Alexander Andreev , Ranko L. Scepanovic , Ivan Pavisic , Alexander Yahontov , Mikhail Udovikhin , Igor Vikhliantsev , Chong-Teik Lim , Seow-Sung Lee , Chee-Wei Kung
- Applicant: eASIC Corporation
- Applicant Address: US CA Santa Clara
- Assignee: eASIC Corporation
- Current Assignee: eASIC Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Panitch Schwarze Belisario & Nadel LLP
- Main IPC: H03K19/177
- IPC: H03K19/177 ; H03K19/0185 ; G06F17/50

Abstract:
A floorplan for a Structured ASIC chip is shown having a core region containing memory and VCLB logic cells surrounded by a plurality of IO connection fabrics that include a first IO connection fabric comprising IO sub-banks connecting the core of the chip to pins for external signals to the core, a first high-speed routing fabric disposed along the east-west vertical top of the core and connects the core to high-speed IO such as SerDes; a network-aware connection fabric connects the core to a microcontroller primarily for testing and repair of the memory in the core; and a second-high speed routing fabric is disposed on the north-south vertical sides of the core and communicates with the IO sub-banks. The VCLB Structured ASIC chip is manufactured on a 28 nm CMOS process lithographic node or smaller, having several metal layers and preferably is programmed on a single via layer.
Public/Granted literature
Information query
IPC分类: