Invention Grant
- Patent Title: Low-voltage active inductor
- Patent Title (中): 低压有源电感
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Application No.: US13560893Application Date: 2012-07-27
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Publication No.: US09024710B2Publication Date: 2015-05-05
- Inventor: Hiroshi Kimura , Ram Surya Narayan , Ashutosh K. Sinha
- Applicant: Hiroshi Kimura , Ram Surya Narayan , Ashutosh K. Sinha
- Applicant Address: US CA Milpitas
- Assignee: LSI Corporation
- Current Assignee: LSI Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Sheridan Ross P.C.
- Main IPC: H03H11/04
- IPC: H03H11/04 ; H03H11/48

Abstract:
An active inductor circuit includes a field-effect transistor having a first source/drain adapted for connection with a first voltage source, a capacitor coupled between the first voltage source and a gate of the field-effect transistor, a resistor coupled between a second source/drain of the field-effect transistor and the gate of the field-effect transistor, and a current source coupled with the gate of the field-effect transistor. A voltage headroom of the active inductor circuit is controlled as a function of at least one of a magnitude of current generated by the current source and a resistance of the resistor.
Public/Granted literature
- US20140028416A1 Low-Voltage Active Inductor Public/Granted day:2014-01-30
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