Cross-talk is mitigated in a switching circuit. In accordance with one or more embodiments, an apparatus includes a multi-pin connector having signal-carrying electrodes that communicate with a device external to the apparatus, and respective field-effect switches that couple the signal-carrying electrodes to respective communication channels in the apparatus. The switches include a first field-effect semiconductor switch having a gate electrode adjacent a channel region that connects electrodes (e.g., source and drain regions) when a threshold switching voltage is applied to the gate, in which the electrodes are connected between one of the signal-carrying electrodes and a first channel coupled to an electrostatic discharge (ESD) circuit. A bias circuit mitigates cross-talk between the communication channels by biasing the channel region of the first field-effect semiconductor switch (in an off state) to boost the threshold switching voltage over a threshold discharge voltage of the ESD circuit.