Invention Grant
- Patent Title: Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating
- Patent Title (中): 具有挥发性和非挥发性功能的半导体存储器包括电阻变化材料和操作方法
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Application No.: US13652457Application Date: 2012-10-15
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Publication No.: US09025358B2Publication Date: 2015-05-05
- Inventor: Yuniarto Widjaja
- Applicant: Yuniarto Widjaja
- Applicant Address: US CA Cupertino
- Assignee: Zeno Semiconductor Inc
- Current Assignee: Zeno Semiconductor Inc
- Current Assignee Address: US CA Cupertino
- Agency: Law Office of Alan W. Cannon
- Agent Alan W. Cannon
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/21 ; G11C11/404 ; G11C13/00 ; H01L29/78 ; H01L45/00 ; H01L27/108 ; G11C11/4072 ; G11C14/00 ; H01L27/24
Abstract:
A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory including a bipolar resistive change element, and methods of operating.
Public/Granted literature
Information query
