Invention Grant
- Patent Title: Reading memory elements within a crossbar array
- Patent Title (中): 读取交叉开关阵列中的内存元素
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Application No.: US13899283Application Date: 2013-05-21
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Publication No.: US09025365B2Publication Date: 2015-05-05
- Inventor: Frederick Perner
- Applicant: Hewlett-Packard Development Company, L.P.
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Agency: Van Cott, Bagley, Cornwall & McCarthy
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C13/00
Abstract:
A method for reading the state of a memory element within a crossbar memory array includes storing a first electric current sensed from a half-selected target memory element within the crossbar memory array; and outputting a final electric current based on the stored first electric current and a second electric current sensed from the target memory element when the target memory element is fully selected.
Public/Granted literature
- US20140347910A1 READING MEMORY ELEMENTS WITHIN A CROSSBAR ARRAY Public/Granted day:2014-11-27
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