A magnetic memory element includes a first stacked unit and a second stacked unit. The first stacked unit includes a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic layer. The second ferromagnetic layer is stacked with the first ferromagnetic layer. The second ferromagnetic layer has a first and second portion. The first and second portion has a changeable direction of magnetization. The second portion is stacked with the first portion in a stacking direction of the first ferromagnetic layer and the second ferromagnetic layer. A magnetic resonance frequency of the second portion is lower than a magnetic resonance frequency of the first portion. The first nonmagnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The second stacked unit is stacked with the first stacked unit in the stacking direction. The second stacked unit includes a third ferromagnetic layer.