Invention Grant
US09025854B2 Wafer defect inspection apparatus and method for inspecting a wafer defect
有权
晶圆缺陷检查装置及检查晶圆缺陷的方法
- Patent Title: Wafer defect inspection apparatus and method for inspecting a wafer defect
- Patent Title (中): 晶圆缺陷检查装置及检查晶圆缺陷的方法
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Application No.: US13103159Application Date: 2011-05-09
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Publication No.: US09025854B2Publication Date: 2015-05-05
- Inventor: Masashi Hayashi
- Applicant: Masashi Hayashi
- Applicant Address: JP Tokyo
- Assignee: SUMCO Corporation
- Current Assignee: SUMCO Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2010-109520 20100511; JP2010-109522 20100511
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G01N21/86 ; G01V8/00 ; G01N21/95 ; G06T7/00 ; H01L21/66

Abstract:
It is an object to obtain an image of a wafer that is suitable for a defect inspection in an efficient manner.It is judged whether or not an average gray level of an image of a wafer W that is an inspection target and that has been imaged by the light receiving part 2 is in the defect detectable range. A control processing part 6a is configured to modify an exposure time in imaging the wafer W and to obtain an image of the wafer W again by the light receiving part 2 in the case in which it is decided that an average gray level of an image of the wafer W is not in a defect detectable range, and an image processing part 6b is configured to carry out a defect inspection based on an image of the wafer W in the case in which it is decided that an average gray level of the image of the wafer W is in the defect detectable range.
Public/Granted literature
- US20110280470A1 WAFER DEFECT INSPECTION APPARATUS AND METHOD FOR INSPECTING A WAFER DEFECT Public/Granted day:2011-11-17
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