Invention Grant
- Patent Title: Non-volatile memory programming data preservation
- Patent Title (中): 非易失性存储器编程数据保存
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Application No.: US13749956Application Date: 2013-01-25
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Publication No.: US09026757B2Publication Date: 2015-05-05
- Inventor: Yan Li
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus LLP
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F11/10 ; G11C16/04 ; G11C16/34 ; G11C29/00 ; G11C11/56

Abstract:
A system and methods for programming a set of data onto non-volatile memory elements, maintaining copies of the data pages to be programmed, as well as surrounding data pages, internally or externally to the memory circuit, verifying programming correctness after programming, and upon discovering programming error, recovering the safe copies of the corrupted data to be reprogrammed in alternative non-volatile memory elements. Additionally, a system and methods for programming one or more sets of data across multiple die of a non-volatile memory system, combining data pages across the multiple die by means such as the XOR operation prior to programming the one or more sets of data, employing various methods to determine the correctness of programming, and upon identifying data corruption, recovering safe copies of data pages by means such as XOR operation to reprogram the pages in an alternate location on the non-volatile memory system.
Public/Granted literature
- US20140215122A1 NON-VOLATILE MEMORY PROGRAMMING DATA PRESERVATION Public/Granted day:2014-07-31
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