Invention Grant
US09026854B2 Method of testing universal flash storage (UFS) interface and memory device implementing method of testing UFS interface
有权
通用闪存存储（UFS）接口和内存设备实现UFS接口测试方法的测试方法
- Patent Title: Method of testing universal flash storage (UFS) interface and memory device implementing method of testing UFS interface
- Patent Title (中): 通用闪存存储（UFS）接口和内存设备实现UFS接口测试方法的测试方法
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Application No.: US13647415Application Date: 2012-10-09
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Publication No.: US09026854B2Publication Date: 2015-05-05
- Inventor: Ha-Neul Jeong , Woo-Seong Cheong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0106635 20111018
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G11C29/02 ; G06F11/22 ; G11C29/56
Abstract:
A method is provided for performing a self-test on a memory device in a test mode, where the memory device includes a universal flash storage (UFS) link layer and a UFS physical layer having a transmitting unit and a receiving unit. The method includes generating a first signal; sending the first signal from a test unit through the UFS link layer to the transmitting unit in the UFS physical layer to be transmitted to the receiving unit; receiving a second signal at the test unit from the receiving unit in the UFS physical layer through the UFS link layer, the second signal being the first signal received by the receiving unit; and testing an operation performed by at least one of the UFS physical layer and the UFS link layer based on the first signal and the second signal.
Public/Granted literature
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