Invention Grant
- Patent Title: Method of defining an intensity selective exposure photomask
- Patent Title (中): 定义强度选择性曝光光掩模的方法
-
Application No.: US14188953Application Date: 2014-02-25
-
Publication No.: US09026957B2Publication Date: 2015-05-05
- Inventor: Chia-Chu Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F1/00 ; G03F1/68
Abstract:
An embodiment of a feed-forward method of determining a photomask pattern is provided. The method includes providing design data associated with an integrated circuit device. A thickness of a coating layer to be used in fabricating the integrated circuit device is predicted based on the design data. This prediction is used to generate a gradating pattern. A photomask is formed having the gradating pattern.
Public/Granted literature
- US20140170537A1 METHOD OF DEFINING AN INTENSITY SELECTIVE EXPOSURE PHOTOMASK Public/Granted day:2014-06-19
Information query
