Invention Grant
- Patent Title: On die thermal sensor of semiconductor memory device
- Patent Title (中): 半导体存储器件的裸片热传感器
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Application No.: US13277517Application Date: 2011-10-20
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Publication No.: US09028141B2Publication Date: 2015-05-12
- Inventor: Chun-Seok Jeong , Yong-Ki Kim
- Applicant: Chun-Seok Jeong , Yong-Ki Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2006-0049117 20060531
- Main IPC: G01K7/00
- IPC: G01K7/00 ; G11C7/00 ; G01K7/01
Abstract:
An on die thermal sensor (ODTS) of a semiconductor memory device includes a high voltage generating unit for generating a high voltage having a voltage level higher than that of a power supply voltage of the semiconductor memory device; and a thermal information output unit for sensing and outputting a temperature as a thermal information code, wherein the thermal information output unit uses the high voltage as its driving voltage.
Public/Granted literature
- US20120033507A1 ON DIE THERMAL SENSOR OF SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2012-02-09
Information query
