Invention Grant
- Patent Title: Method of forming a photoresist layer
- Patent Title (中): 形成光致抗蚀剂层的方法
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Application No.: US13602465Application Date: 2012-09-04
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Publication No.: US09028915B2Publication Date: 2015-05-12
- Inventor: Chun-Wei Chang , Chih-Chien Wang , Wang-Pen Mo , Hung-Chang Hsieh
- Applicant: Chun-Wei Chang , Chih-Chien Wang , Wang-Pen Mo , Hung-Chang Hsieh
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: B05D3/12
- IPC: B05D3/12 ; H01L21/67 ; G03F7/16
Abstract:
A method for forming a photoresist layer on a semiconductor device is disclosed. An exemplary includes providing a wafer. The method further includes spinning the wafer during a first cycle at a first speed, while a pre-wet material is dispensed over the wafer and spinning the wafer during the first cycle at a second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer during a second cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer and spinning the wafer during the second cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer at a third speed, while a photoresist material is dispensed over the wafer including the pre-wet material.
Public/Granted literature
- US20140065843A1 Method of Forming a Photoresist Layer Public/Granted day:2014-03-06
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