Invention Grant
US09028917B2 High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films
有权
高分子量烷基烯丙基钴三羰基配合物及其用于制备电介质薄膜的用途
- Patent Title: High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films
- Patent Title (中): 高分子量烷基烯丙基钴三羰基配合物及其用于制备电介质薄膜的用途
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Application No.: US13388861Application Date: 2010-07-27
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Publication No.: US09028917B2Publication Date: 2015-05-12
- Inventor: Rajesh Odedra , Neil Boag , Jeff Anthis , Ravi Kanjolia
- Applicant: Rajesh Odedra , Neil Boag , Jeff Anthis , Ravi Kanjolia
- Applicant Address: US MO St. Louis
- Assignee: Sigma-Aldrich Co. LLC
- Current Assignee: Sigma-Aldrich Co. LLC
- Current Assignee Address: US MO St. Louis
- Agency: Harness, Dickey & Pierce, P.L.C.
- International Application: PCT/US2010/043300 WO 20100727
- International Announcement: WO2011/017068 WO 20110210
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C07F15/00 ; C07F15/06 ; C23C16/40 ; C23C16/455
Abstract:
A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R1 and R2 are independently C2-C8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.
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