Invention Grant
US09028919B2 Epitaxial graphene surface preparation for atomic layer deposition of dielectrics
有权
外延石墨烯表面准备用于电介质的原子层沉积
- Patent Title: Epitaxial graphene surface preparation for atomic layer deposition of dielectrics
- Patent Title (中): 外延石墨烯表面准备用于电介质的原子层沉积
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Application No.: US14315356Application Date: 2014-06-26
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Publication No.: US09028919B2Publication Date: 2015-05-12
- Inventor: Nelson Garces , Virginia D. Wheeler , David Kurt Gaskill , Charles R. Eddy, Jr. , Glenn G. Jernigan
- Applicant: Nelson Garces , Virginia D. Wheeler , David Kurt Gaskill , Charles R. Eddy, Jr. , Glenn G. Jernigan
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Joslyn Barritt
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/02 ; C23C16/40 ; C23C16/455 ; B82Y30/00 ; B82Y40/00 ; C30B25/18
Abstract:
Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-κ oxide-based dielectric compounds such as Al2O3, HfO2, TaO5, or TiO2 are provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.
Public/Granted literature
- US20140308437A1 Epitaxial Graphene Surface Preparation for Atomic Layer Deposition of Dielectrics Public/Granted day:2014-10-16
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