Invention Grant
- Patent Title: Resist-protective film-forming composition and patterning process
- Patent Title (中): 抗蚀保护成膜组合物和图案化工艺
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Application No.: US13706825Application Date: 2012-12-06
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Publication No.: US09029075B2Publication Date: 2015-05-12
- Inventor: Jun Hatakeyama
- Applicant: Shin-Etsu Chemical Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2011-266400 20111206; JP2012-121797 20120529
- Main IPC: G03F7/11
- IPC: G03F7/11 ; G03F7/20 ; C09D145/00 ; C08F232/08 ; C08F216/10 ; C09D129/02 ; C09D125/18 ; C08F220/18 ; C08F220/28
Abstract:
A pattern is printed by forming a photoresist layer on a wafer, forming a protective film thereon, exposure, and development. The protective film is formed from a composition comprising a copolymer of hydroxystyrene with acenaphthylene and/or vinylnaphthalene and a mixture of an alcohol solvent and an ether or aromatic solvent.
Public/Granted literature
- US20130143163A1 RESIST-PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS Public/Granted day:2013-06-06
Information query
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