Invention Grant
- Patent Title: Method of forming a high thermal conducting semiconductor device package
- Patent Title (中): 形成高导热半导体器件封装的方法
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Application No.: US13903308Application Date: 2013-05-28
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Publication No.: US09029202B2Publication Date: 2015-05-12
- Inventor: Weng Foong Yap , Jinbang Tang
- Applicant: Freescale Semiconductor, Inc.
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L21/50 ; H01L23/373
Abstract:
A semiconductor device package (100) includes a heat spreader (503) formed by depositing a first thin film layer (301) of a first metal on a top surface (150) of a die (110) and to exposed portions of a top surface of an encapsulant (208), depositing a second thin film layer (402) of a second metal on a top surface of the first thin film layer, and depositing a third layer (503) of a third metal on a top surface of the second thin film layer.
Public/Granted literature
- US20140353816A1 METHOD OF FORMING A HIGH THERMAL CONDUCTING SEMICONDUCTOR DEVICE PACKAGE Public/Granted day:2014-12-04
Information query
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