Invention Grant
- Patent Title: Method for manufacturing semiconductor device and method for manufacturing microphone
- Patent Title (中): 制造半导体器件的方法及制造麦克风的方法
-
Application No.: US14000780Application Date: 2011-03-18
-
Publication No.: US09029204B2Publication Date: 2015-05-12
- Inventor: Yasuhiro Horimoto , Yusuke Nakagawa , Tadashi Inoue , Toshiyuki Takahashi
- Applicant: Yasuhiro Horimoto , Yusuke Nakagawa , Tadashi Inoue , Toshiyuki Takahashi
- Applicant Address: JP Kyoto
- Assignee: OMRON Corporation
- Current Assignee: OMRON Corporation
- Current Assignee Address: JP Kyoto
- Agency: Nutter McClennen & Fish LLP
- Agent John J. Penny, Jr.
- Priority: JP2011-035915 20110222
- International Application: PCT/JP2011/056586 WO 20110318
- International Announcement: WO2012/114538 WO 20120830
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B81C1/00 ; H01L21/58 ; H01L21/304 ; H04R19/00 ; H04R31/00 ; H01L21/50
Abstract:
A method for manufacturing a semiconductor device is provided, the method comprising: fabricating a semiconductor element on a semiconductor substrate; joining a surface of the semiconductor substrate to a support member, the surface being on a side where the semiconductor element is fabricated; and polishing a surface on an opposite side of the surface of the semiconductor substrate where the semiconductor element is fabricated and reducing a thickness of the semiconductor substrate, in a state where the semiconductor substrate and the support member are joined.
Public/Granted literature
- US20140045290A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING MICROPHONE Public/Granted day:2014-02-13
Information query
IPC分类:
