Invention Grant
- Patent Title: Semiconductor device manufacturing method
- Patent Title (中): 半导体器件制造方法
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Application No.: US14323430Application Date: 2014-07-03
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Publication No.: US09029207B2Publication Date: 2015-05-12
- Inventor: Toshio Nakajima
- Applicant: Rohm Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2011-170355 20110803
- Main IPC: H01L21/332
- IPC: H01L21/332 ; H01L21/336 ; H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L21/261 ; H01L21/263 ; H01L21/265 ; H01L29/06 ; H01L29/10
Abstract:
A semiconductor device includes a p-type semiconductor layer, n-type column regions formed of columnar thermal donors exhibiting an n-type property, a p-type column region interposed between the n-type column regions, the n-type column regions configured to form a super-junction structure in cooperation with the p-type column region, a channel region formed in the semiconductor layer, a source region formed in the channel region, a gate insulator film formed on the semiconductor layer, and a gate electrode formed on the gate insulator film and opposite to the channel region across the gate insulator film.
Public/Granted literature
- US20140315359A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2014-10-23
Information query
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