Invention Grant
- Patent Title: Method of manufacturing a thin film transistor substrate and thin film transistor substrate manufactured by the same
- Patent Title (中): 制造薄膜晶体管基板及其制造的薄膜晶体管基板的方法
-
Application No.: US13877465Application Date: 2011-10-11
-
Publication No.: US09029209B2Publication Date: 2015-05-12
- Inventor: Mitsunobu Miyamoto
- Applicant: Mitsunobu Miyamoto
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Keating & Bennett, LLP
- Priority: JP2010-233395 20101018
- International Application: PCT/JP2011/005681 WO 20111011
- International Announcement: WO2012/053161 WO 20120426
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L29/66 ; H01L29/786
Abstract:
A method of manufacturing a thin film transistor substrate (1) includes at least the steps of: forming a gate electrode (15) on an insulating substrate (10) by using a first photomask; forming a channel protective film (21) on an oxide semiconductor layer (13) so as to cover a channel region (C) by using a second photomask; forming a source electrode (19) on the oxide semiconductor layer (13) by using a third photomask; and forming a planarizing film (18) on an interlayer insulating film (17) by using a fourth photomask.
Public/Granted literature
Information query
IPC分类:
