Invention Grant
- Patent Title: Nano field-effect vacuum tube and fabrication method thereof
- Patent Title (中): 纳米场效应真空管及其制造方法
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Application No.: US14020965Application Date: 2013-09-09
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Publication No.: US09029211B2Publication Date: 2015-05-12
- Inventor: Deyuan Xiao
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Shanghai
- Assignee: Semicoductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semicoductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201310170430 20130509
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8234 ; H01L29/26 ; H01L29/10 ; H01L29/66 ; H01L29/78 ; H01L29/06 ; B82Y40/00

Abstract:
A method is provided for fabricating a nano field-effect vacuum tube. The method includes providing a substrate having an insulating layer and a sacrificial layer; and forming a sacrificial line, a source sacrificial layer and a drain sacrificial layer. The method also includes forming a trench in the insulating layer; and forming a dielectric layer on the surface of the sacrificial line. Further, the method includes forming a metal layer on the dielectric layer to fill up the trench, cover the sacrificial line and expose the source sacrificial layer and the drain sacrificial layer; and removing the source sacrificial layer and the drain sacrificial layer. Further, the method also includes removing the sacrificial line to form a through channel; forming an isolation layer on the metal layer; and forming a source region and a drain region on the insulating layer at both ends of the metal layer.
Public/Granted literature
- US20140332753A1 NANO FIELD-EFFECT VACUUM TUBE AND FABRICATION METHOD THEREOF Public/Granted day:2014-11-13
Information query
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