Invention Grant
US09029214B2 Integrated circuits and methods for fabricating integrated circuits with improved silicide contacts
有权
用于制造具有改进的硅化物接触的集成电路的集成电路和方法
- Patent Title: Integrated circuits and methods for fabricating integrated circuits with improved silicide contacts
- Patent Title (中): 用于制造具有改进的硅化物接触的集成电路的集成电路和方法
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Application No.: US13740974Application Date: 2013-01-14
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Publication No.: US09029214B2Publication Date: 2015-05-12
- Inventor: Jan Hoentschel , Stefan Flachowsky , Nicolas Sassiat , Ran Yan
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L29/66 ; H01L29/78
Abstract:
Integrated circuits and methods for fabricating integrated circuits are provided herein. In an embodiment, a method for fabricating an integrated circuit includes forming over a semiconductor substrate a gate structure. The method further includes depositing a non-conformal spacer material around the gate structure. A protection mask is formed over the non-conformal spacer material. The method etches the non-conformal spacer material and protection mask to form a salicidation spacer. Further, a self-aligned silicide contact is formed adjacent the salicidation spacer.
Public/Granted literature
- US20140197498A1 INTEGRATED CIRCUITS AND METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH IMPROVED SILICIDE CONTACTS Public/Granted day:2014-07-17
Information query
IPC分类:
