Invention Grant
- Patent Title: Semiconductor devices having three-dimensional bodies with modulated heights
- Patent Title (中): 具有调制高度的三维体的半导体器件
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Application No.: US13995467Application Date: 2011-12-21
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Publication No.: US09029221B2Publication Date: 2015-05-12
- Inventor: Annalisa Cappellani , Kelin J. Kuhn , Rafael Rios , Aura Cecilia Davila Latorre , Tahir Ghani
- Applicant: Annalisa Cappellani , Kelin J. Kuhn , Rafael Rios , Aura Cecilia Davila Latorre , Tahir Ghani
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- International Application: PCT/US2011/066544 WO 20111221
- International Announcement: WO2013/095443 WO 20130627
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L29/78 ; H01L21/8234 ; H01L21/84 ; H01L27/088 ; H01L27/12 ; H01L21/308

Abstract:
Semiconductor devices having three-dimensional bodies with modulated heights and methods to form such devices are described. For example, a semiconductor structure includes a first semiconductor device having a first semiconductor body disposed above a substrate. The first semiconductor body has a first height and an uppermost surface with a first horizontal plane. The semiconductor structure also includes a second semiconductor device having a second semiconductor body disposed above the substrate. The second semiconductor body has a second height and an uppermost surface with a second horizontal plane. The first and second horizontal planes are co-planar and the first and second heights are different.
Public/Granted literature
- US20130320448A1 SEMICONDUCTOR DEVICES HAVING THREE-DIMENSIONAL BODIES WITH MODULATED HEIGHTS Public/Granted day:2013-12-05
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