Invention Grant
US09029236B2 Termination structure with multiple embedded potential spreading capacitive for trench MOSFET and method
有权
具有多个嵌入式电位扩展电容用于沟槽MOSFET的端接结构及方法
- Patent Title: Termination structure with multiple embedded potential spreading capacitive for trench MOSFET and method
- Patent Title (中): 具有多个嵌入式电位扩展电容用于沟槽MOSFET的端接结构及方法
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Application No.: US13712980Application Date: 2012-12-13
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Publication No.: US09029236B2Publication Date: 2015-05-12
- Inventor: Xiaobin Wang , Anup Bhalla , Hamza Yilmaz , Daniel Ng
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha & Omega Semiconductor, Inc.
- Current Assignee: Alpha & Omega Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: C H Emily LLC
- Agent Chen-Hwa Tsao
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/76 ; H01L21/762 ; H01L29/06
Abstract:
A termination structure with multiple embedded potential spreading capacitive structures (TSMEC) and method are disclosed for terminating an adjacent trench MOSFET atop a bulk semiconductor layer (BSL) with bottom drain electrode. The BSL has a proximal bulk semiconductor wall (PBSW) supporting drain-source voltage (DSV) and separating TSMEC from trench MOSFET. The TSMEC has oxide-filled large deep trench (OFLDT) bounded by PBSW and a distal bulk semiconductor wall (DBSW). The OFLDT includes a large deep oxide trench into the BSL and embedded capacitive structures (EBCS) located inside the large deep oxide trench and between PBSW and DBSW for spatially spreading the DSV across them. In one embodiment, the EBCS contains interleaved conductive embedded polycrystalline semiconductor regions (EPSR) and oxide columns (OXC) of the OFLDT, a proximal EPSR next to PBSW is connected to an active upper source region and a distal EPSR next to DBSW is connected to the DBSW.
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