Invention Grant
- Patent Title: Method for producing a semiconductor device and field-effect semiconductor device
- Patent Title (中): 半导体器件和场效应半导体器件的制造方法
-
Application No.: US13646790Application Date: 2012-10-08
-
Publication No.: US09029243B2Publication Date: 2015-05-12
- Inventor: Hans-Joachim Schulze , Peter Irsigler
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/322
- IPC: H01L21/322 ; H01L29/78 ; H01L29/06 ; H01L21/223 ; H01L29/36 ; H01L21/265
Abstract:
A method for producing a semiconductor device is provided. The method includes providing a wafer including a main surface and a silicon layer arranged at the main surface and having a nitrogen concentration of at least about 3*1014 cm−3, and partially out-diffusing nitrogen to reduce the nitrogen concentration at least close to the main surface. Further, a semiconductor device is provided.
Public/Granted literature
- US20140097488A1 Method for Producing a Semiconductor Device and Field-Effect Semiconductor Device Public/Granted day:2014-04-10
Information query
IPC分类:
