Invention Grant
US09029248B2 Method of fabricating Ag-doped Te-based nano-material and memory device using the same
有权
制造Ag掺杂Te基纳米材料的方法和使用其的存储器件
- Patent Title: Method of fabricating Ag-doped Te-based nano-material and memory device using the same
- Patent Title (中): 制造Ag掺杂Te基纳米材料的方法和使用其的存储器件
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Application No.: US12937182Application Date: 2008-10-30
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Publication No.: US09029248B2Publication Date: 2015-05-12
- Inventor: William Jo , Ah-Reum Jeong
- Applicant: William Jo , Ah-Reum Jeong
- Applicant Address: KR
- Assignee: EWHA University-Industry Collaboration Foundation
- Current Assignee: EWHA University-Industry Collaboration Foundation
- Current Assignee Address: KR
- Priority: KR10-2008-0032592 20080408
- International Application: PCT/KR2008/006402 WO 20081030
- International Announcement: WO2009/125904 WO 20091015
- Main IPC: H01L45/00
- IPC: H01L45/00 ; G11C13/00 ; B82Y10/00 ; B82Y30/00
Abstract:
A nano-ionic memory device is provided. The memory device includes a substrate, a chemically inactive lower electrode provided on the substrate, a solid electrolyte layer provided on the lower electrode and including a silver (Ag)-doped telluride (Te)-based nano-material, and an oxidizable upper electrode provided on the electrolyte layer.
Public/Granted literature
- US20110024715A1 METHOD OF FABRICATING AG-DOPED TE-BASED NANO-MATERIAL AND MEMORY DEVICE USING THE SAME Public/Granted day:2011-02-03
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