Invention Grant
- Patent Title: Methods for depositing a tin-containing layer on a substrate
- Patent Title (中): 在基材上沉积含锡层的方法
-
Application No.: US13779713Application Date: 2013-02-27
-
Publication No.: US09029264B2Publication Date: 2015-05-12
- Inventor: Errol Antonio C. Sanchez , Yi-Chiau Huang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H01L21/311
- IPC: H01L21/311 ; C23C16/513 ; C23C16/30 ; C23C16/06 ; C23C16/44
Abstract:
Methods of depositing a tin-containing layer on a substrate are disclosed herein. In some embodiments, a method of depositing a tin-containing layer on a substrate may include flowing a tin source comprising a tin halide into a reaction volume; flowing a hydrogen plasma into the reaction volume; forming one or more tin hydrides within the reaction volume from the tin source and the hydrogen plasma; and depositing the tin-containing layer on a first surface of the substrate using the one or more tin hydrides.
Public/Granted literature
- US20130240478A1 METHODS FOR DEPOSITING A TiN-CONTAINING LAYER ON A SUBSTRATE Public/Granted day:2013-09-19
Information query
IPC分类:
