Invention Grant
- Patent Title: Graphene on semiconductor detector
- Patent Title (中): 石墨烯在半导体探测器上
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Application No.: US14471001Application Date: 2014-08-28
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Publication No.: US09029833B2Publication Date: 2015-05-12
- Inventor: Francis J. Kub , Karl D. Hobart , Travis J. Anderson
- Applicant: Francis J. Kub , Karl D. Hobart , Travis J. Anderson
- Applicant Address: US DC Washington
- Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Joslyn Barritt
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/00 ; H01L31/028 ; H01L27/148 ; H01L31/0336 ; H01L27/146

Abstract:
Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.
Public/Granted literature
- US20140367824A1 Graphene on Semiconductor Detector Public/Granted day:2014-12-18
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