Invention Grant
US09029868B2 Semiconductor apparatus having nitride semiconductor buffer layer doped with at least one of Fe, Si, and C
有权
具有掺杂有Fe，Si和C中的至少一种的氮化物半导体缓冲层的半导体装置
- Patent Title: Semiconductor apparatus having nitride semiconductor buffer layer doped with at least one of Fe, Si, and C
- Patent Title (中): 具有掺杂有Fe，Si和C中的至少一种的氮化物半导体缓冲层的半导体装置
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Application No.: US13935821Application Date: 2013-07-05
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Publication No.: US09029868B2Publication Date: 2015-05-12
- Inventor: Junji Kotani , Tetsuro Ishiguro , Atsushi Yamada , Norikazu Nakamura
- Applicant: Fujitsu Limited
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2012-218250 20120928
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/205
Abstract:
A semiconductor apparatus includes a substrate; a buffer layer formed on the substrate; a first semiconductor layer formed on the buffer layer; and a second semiconductor layer formed on the first semiconductor layer. Further, the buffer layer is formed of AlGaN and doped with Fe, the buffer layer includes a plurality of layers having different Al component ratios from each other, and the Al component ratio of a first layer is greater than the Al component ratio of a second layer and a Fe concentration of the first layer is less than the Fe concentration of the second layer, the first and second layers being included in the plurality of layers, and the first layer being formed on a substrate side of the second layer.
Public/Granted literature
- US20140091313A1 SEMICONDUCTOR APPARATUS Public/Granted day:2014-04-03
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