Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13982519Application Date: 2012-11-21
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Publication No.: US09029871B2Publication Date: 2015-05-12
- Inventor: Akitaka Soeno , Toshimasa Yamamoto
- Applicant: Akitaka Soeno , Toshimasa Yamamoto
- Applicant Address: JP Toyota-Shi
- Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee Address: JP Toyota-Shi
- Agency: Kenyon & Kenyon LLP
- International Application: PCT/JP2012/080159 WO 20121121
- International Announcement: WO2014/080471 WO 20140530
- Main IPC: H01L29/161
- IPC: H01L29/161 ; H01L29/78 ; H01L29/423 ; H01L29/10 ; H01L29/08
Abstract:
A semiconductor device includes a first semiconductor layer surrounding a bottom of the trench gate, a second semiconductor layer disposed along one of end portions of the trench gate in a longitudinal direction of the trench gate, one of end portions of the second semiconductor layer contacting the body layer and the other of the end portions of the second semiconductor layer contacting the first semiconductor layer, and a connecting layer, one of end portions of the connecting layer being connected to the body layer and the other of the end portions of the connecting layer being connected to the first semiconductor layer, the connecting layer contacting the second semiconductor layer, and the connecting layer being separated from the one of the end portions of the trench gate in the longitudinal direction of the trench gate by the second semiconductor layer.
Public/Granted literature
- US20150041887A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-02-12
Information query
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