Invention Grant
- Patent Title: Semiconductor device having a first silicon carbide semiconductor layer and a second silicon carbide semiconductor layer
- Patent Title (中): 具有第一碳化硅半导体层和第二碳化硅半导体层的半导体器件
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Application No.: US14347593Application Date: 2013-09-12
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Publication No.: US09029874B2Publication Date: 2015-05-12
- Inventor: Nobuyuki Horikawa , Masao Uchida , Masahiko Niwayama
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2012-201197 20120913; JP2012-201200 20120913
- International Application: PCT/JP2013/005417 WO 20130912
- International Announcement: WO2014/041808 WO 20140320
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/06 ; H01L29/78 ; H01L29/66 ; H01L29/16 ; H01L21/82 ; H01L27/06 ; H01L29/45
Abstract:
A semiconductor device includes a first cell and a second cell. Each of the first cell and the second cell includes a first silicon carbide semiconductor layer including a first region and a second region provided in the first region, a second silicon carbide semiconductor layer provided on and in contact with the first silicon carbide semiconductor layer, a first ohmic electrode in ohmic contact with the second region, and an insulating film provided on the second silicon carbide semiconductor layer. The first cell includes a gate electrode, and the second cell includes no electrode configured to control the electric potential of the second silicon carbide semiconductor layer independently of the electric potential of the first ohmic electrode.
Public/Granted literature
- US20140231828A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-08-21
Information query
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