Invention Grant
- Patent Title: Light emitting diode
- Patent Title (中): 发光二极管
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Application No.: US13340661Application Date: 2011-12-29
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Publication No.: US09029889B2Publication Date: 2015-05-12
- Inventor: Zhen-Dong Zhu , Qun-Qing Li , Shou-Shan Fan
- Applicant: Zhen-Dong Zhu , Qun-Qing Li , Shou-Shan Fan
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L33/44 ; H01L33/38 ; H01L33/40

Abstract:
A light emitting diode is provided. The light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and a surface of the second semiconductor layer which is away from the active layer is a light extraction surface of the LED. The first electrode is electrically connected with the first semiconductor layer. The second electrode electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are formed on the light extraction surface of LED, the number of the three-dimensional nano-structures are aligned side by side, and a cross section of each three-dimensional nano-structure is M-shaped.
Public/Granted literature
- US20130087820A1 LIGHT EMITTING DIODE Public/Granted day:2013-04-11
Information query
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