Invention Grant
US09029936B2 Non-volatile memory structure containing nanodots and continuous metal layer charge traps and method of making thereof
有权
含有纳米点和连续金属层电荷阱的非挥发性记忆结构及其制备方法
- Patent Title: Non-volatile memory structure containing nanodots and continuous metal layer charge traps and method of making thereof
- Patent Title (中): 含有纳米点和连续金属层电荷阱的非挥发性记忆结构及其制备方法
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Application No.: US13708677Application Date: 2012-12-07
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Publication No.: US09029936B2Publication Date: 2015-05-12
- Inventor: Vinod Purayath , George Samachisa , George Matamis , James Kai , Yuan Zhang
- Applicant: SanDisk Technologies, Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/76 ; H01L29/788 ; H01L21/336 ; H01L29/66 ; H01L29/423 ; H01L27/115
Abstract:
A memory device includes a semiconductor channel, a tunnel dielectric layer located over the semiconductor channel, a first charge trap including a plurality of electrically conductive nanodots located over the tunnel dielectric layer, dielectric separation layer located over the nanodots, a second charge trap including a continuous metal layer located over the separation layer, a blocking dielectric located over the second charge trap, and a control gate located over the blocking dielectric.
Public/Granted literature
Information query
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