Invention Grant
US09029948B2 LDMOS device with step-like drift region and fabrication method thereof
有权
具有阶梯状漂移区域的LDMOS器件及其制造方法
- Patent Title: LDMOS device with step-like drift region and fabrication method thereof
- Patent Title (中): 具有阶梯状漂移区域的LDMOS器件及其制造方法
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Application No.: US13947604Application Date: 2013-07-22
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Publication No.: US09029948B2Publication Date: 2015-05-12
- Inventor: Wensheng Qian
- Applicant: Shanghai Hua Hong NEC Electronics Co., Ltd
- Applicant Address: CN Shanghai
- Assignee: Shanghai Hua Hong NEC Electronics Co., Ltd.
- Current Assignee: Shanghai Hua Hong NEC Electronics Co., Ltd.
- Current Assignee Address: CN Shanghai
- Agency: MKG, LLC
- Priority: CN201210264945 20120727
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L29/08
Abstract:
An LDMOS device is disclosed. The LDMOS device includes: a substrate having a first type of conductivity; a drift region having a second type of conductivity and being formed in the substrate; a doped region having the first type of conductivity and being formed in the substrate, the doped region being located at a first end of the drift region and laterally adjacent to the drift region; and a heavily doped drain region having the second type of conductivity and being formed in the substrate, the heavily doped drain region being located at a second end of the drift region, wherein the drift region has a step-like top surface with at least two step portions, and wherein a height of the at least two step portions decreases progressively in a direction from the doped region to the drain region. A method of fabricating LDMOS device is also disclosed.
Public/Granted literature
- US20140027850A1 LDMOS DEVICE WITH STEP-LIKE DRIFT REGION AND FABRICATION METHOD THEREOF Public/Granted day:2014-01-30
Information query
IPC分类:
