Invention Grant
US09029978B2 Semiconductor trench structure having a silicon nitride layer overlaying an oxide layer
有权
具有覆盖氧化物层的氮化硅层的半导体沟槽结构
- Patent Title: Semiconductor trench structure having a silicon nitride layer overlaying an oxide layer
- Patent Title (中): 具有覆盖氧化物层的氮化硅层的半导体沟槽结构
-
Application No.: US13456079Application Date: 2012-04-25
-
Publication No.: US09029978B2Publication Date: 2015-05-12
- Inventor: Ting Cheong Ang
- Applicant: Ting Cheong Ang
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN200810040371 20080708
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L21/762
Abstract:
A semiconductor structure includes a semiconductor substrate with a substrate region and a trench extending into the surface region of the semiconductor substrate. The trench includes sidewalls, a bottom and a depth. The semiconductor structure further includes a trench liner overlying the bottom and the sidewalls of the trench. The semiconductor structure also includes a shallow trench isolation structure filling at least the depth of the trench. The shallow trench isolation structure is formed from alternating layers of silicon nitride and high-density plasma oxide.
Public/Granted literature
- US20120211863A1 METHOD OF ELIMINATING MICRO-TRENCHES DURING SPACER ETCH Public/Granted day:2012-08-23
Information query
IPC分类:
