Invention Grant
US09029985B2 Memristor comprising film with comb-like structure of nanocolumns of metal oxide embedded in a metal oxide matrix
有权
忆阻器包括嵌入金属氧化物基体中的金属氧化物纳米柱梳状结构的膜
- Patent Title: Memristor comprising film with comb-like structure of nanocolumns of metal oxide embedded in a metal oxide matrix
- Patent Title (中): 忆阻器包括嵌入金属氧化物基体中的金属氧化物纳米柱梳状结构的膜
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Application No.: US14282910Application Date: 2014-05-20
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Publication No.: US09029985B2Publication Date: 2015-05-12
- Inventor: Judith L. Driscoll , ShinBuhm Lee , Quanxi Jia
- Applicant: Los Alamos National Security, LLC
- Applicant Address: US NM Los Alamos
- Assignee: Los Alamos National Security, LLC
- Current Assignee: Los Alamos National Security, LLC
- Current Assignee Address: US NM Los Alamos
- Agent Samuel L. Borkowsky
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L45/00 ; G11C13/00 ; C09K11/02
Abstract:
Films having a comb-like structure of nanocolumns of Sm2O3 embedded in a SrTiO3 formed spontaneously on a substrate surface by pulsed laser deposition. In an embodiment, the nanocolumns had a width of about 20 nm with spaces between nanocolumns of about 10 nm. The films exhibited memristive behavior, and were extremely uniform and tunable. Oxygen deficiencies were located at vertical interfaces between the nanocolumns and the matrix. The substrates may be single-layered or multilayered.
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