Invention Grant
- Patent Title: Mold cap for semiconductor device
- Patent Title (中): 半导体器件用模具帽
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Application No.: US13917641Application Date: 2013-06-14
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Publication No.: US09030000B2Publication Date: 2015-05-12
- Inventor: Poh Leng Eu , Boon Yew Low , Kai Yun Yow
- Applicant: Poh Leng Eu , Boon Yew Low , Kai Yun Yow
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Charles Bergere
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L21/56 ; H01L23/00
Abstract:
A semiconductor package has a substrate with a solder mask layer, and upper and lower surfaces. Conductive traces and electrical contacts are formed on the substrate, and vias are formed in the substrate to electrically connect the conductive traces and electrical contacts. A semiconductor die is attached on the upper surface of the substrate. A mold cap is formed on the upper surface of the substrate and covers the die and the conductive traces. The mold cap includes a mold body having clipped corners and extensions that extend from each of the clipped corners. The extensions and clipped corners help prevent package cracking.
Public/Granted literature
- US20140367840A1 MOLD CAP FOR SEMICONDUCTOR DEVICE Public/Granted day:2014-12-18
Information query
IPC分类:
