Invention Grant
- Patent Title: Stacked semiconductor apparatus, system and method of fabrication
- Patent Title (中): 叠层半导体器件,系统和制造方法
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Application No.: US13659146Application Date: 2012-10-24
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Publication No.: US09030004B2Publication Date: 2015-05-12
- Inventor: Ki-Tae Park , Kang-Wook Lee , Young-Don Choi , Yun-Sang Lee
- Applicant: Ki-Tae Park , Kang-Wook Lee , Young-Don Choi , Yun-Sang Lee
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2008-0004351 20080115
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L23/34 ; H01L23/64 ; H01L25/065 ; G11C5/06

Abstract:
A stacked semiconductor apparatus and method of fabricating same are disclosed. The apparatus includes upper and lower semiconductor devices having a similar pattern of connection elements. When stacked connected the resulting plurality of semiconductor devices includes a serial connection path traversing the stack, and may also include parallel connection paths, back-side mounted large components, and vertical thermal conduits.
Public/Granted literature
- US20130077374A1 STACKED SEMICONDUCTOR APPARATUS, SYSTEM AND METHOD OF FABRICATION Public/Granted day:2013-03-28
Information query
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