Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12903403Application Date: 2010-10-13
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Publication No.: US09030007B2Publication Date: 2015-05-12
- Inventor: Daisuke Mizutani
- Applicant: Daisuke Mizutani
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2009-237377 20091014; JP2010-190604 20100827
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H05K1/14 ; H05K3/34 ; H05K3/36 ; H01L21/768 ; H05K1/02 ; H05K3/22

Abstract:
A semiconductor device includes a first circuit base member including a surface having multiple first electrodes formed thereon, a second circuit base member being provided above the first circuit base member and having first through holes and second through holes formed respectively above the first electrodes, a semiconductor package provided above the second circuit base member, and multiple first bumps provided inside the first through holes and the second through holes to connect the first electrodes to the semiconductor package.
Public/Granted literature
- US20110084383A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-04-14
Information query
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