Invention Grant
- Patent Title: Interconnect structures comprising flexible buffer layers
- Patent Title (中): 包括柔性缓冲层的互连结构
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Application No.: US13624766Application Date: 2012-09-21
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Publication No.: US09030013B2Publication Date: 2015-05-12
- Inventor: Chao-Hsien Peng , Hsin-Yen Huang , Hsiang-Huan Lee , Shau-Lin Shue
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L21/768 ; H01L23/532

Abstract:
A structure includes a substrate, a low-k dielectric layer over the substrate, and a conductive barrier layer extending into the low-k dielectric layer. The conductive barrier layer includes a sidewall portion. A metal line in the low-k dielectric layer adjoins the conductive barrier layer. An organic buffer layer is between the sidewall portion of the conductive barrier layer and the low-k dielectric layer.
Public/Granted literature
- US20140084471A1 Interconnect Structures Comprising Flexible Buffer Layers Public/Granted day:2014-03-27
Information query
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