Invention Grant
US09030016B2 Semiconductor device with copper interconnects separated by air gaps
有权
具有由空气间隙分开的铜互连的半导体器件
- Patent Title: Semiconductor device with copper interconnects separated by air gaps
- Patent Title (中): 具有由空气间隙分开的铜互连的半导体器件
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Application No.: US14022864Application Date: 2013-09-10
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Publication No.: US09030016B2Publication Date: 2015-05-12
- Inventor: Vinod R. Purayath , James K. Kai , Jayavel Pachamuthu , Jarrett Jun Liang , George Matamis
- Applicant: SanDisk Technologies, Inc.
- Applicant Address: US TX Plano
- Assignee: Sandisk Technologies Inc.
- Current Assignee: Sandisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/532 ; H01L21/768
Abstract:
A semiconductor device including a plurality of copper interconnects. At least a first portion of the plurality of copper interconnects has a meniscus in a top surface. The semiconductor device also includes a plurality of air gaps, wherein each air gap of the plurality of air gaps is located between an adjacent pair of at least the first portion of the plurality of bit lines.
Public/Granted literature
- US20140008804A1 COPPER INTERCONNECTS SEPARATED BY AIR GAPS AND METHOD OF MAKING THEREOF Public/Granted day:2014-01-09
Information query
IPC分类:
