Invention Grant
- Patent Title: Semiconductor device with through-silicon vias
- Patent Title (中): 具有通硅通孔的半导体器件
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Application No.: US13094619Application Date: 2011-04-26
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Publication No.: US09030024B2Publication Date: 2015-05-12
- Inventor: Jin-Ki Kim
- Applicant: Jin-Ki Kim
- Applicant Address: CA Ottawa, Ontario
- Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee Address: CA Ottawa, Ontario
- Agency: Conversant IP Management Inc.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L25/065 ; G11C5/02 ; G11C8/12 ; G11C29/00
Abstract:
Disclosed is a semiconductor device with through-silicon vias (TSVs) that comprises a primary TSV group, a plurality of signal lines connected to the primary TSV group, a redundant TSV group and connection circuitry responsive to a control signal having a predetermined value to electrically connect the signal lines to the redundant TSV group.
Public/Granted literature
- US20110309519A1 SEMICONDUCTOR DEVICE WITH THROUGH-SILICON VIAS Public/Granted day:2011-12-22
Information query
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