Invention Grant
- Patent Title: Integrated circuit layout
- Patent Title (中): 集成电路布局
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Application No.: US13834495Application Date: 2013-03-15
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Publication No.: US09030025B2Publication Date: 2015-05-12
- Inventor: Chao-Yuan Huang , Yueh-Feng Ho , Ming-Sheng Yang , Hwi-Huang Chen
- Applicant: Chao-Yuan Huang , Yueh-Feng Ho , Ming-Sheng Yang , Hwi-Huang Chen
- Applicant Address: TW Hsinchu
- Assignee: IPEnval Consultant Inc.
- Current Assignee: IPEnval Consultant Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Kamrath IP Lawfirm, P.A.
- Agent Alan D. Kamrath
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
An integrated circuit layout comprises a through silicon via (TSV) configured to couple positive operational voltage VDD (VDD TSV), a through silicon via (TSV) configured to couple operational signals (signal TSV), a plurality of through silicon vias (TSVs) configured to couple operational voltage VSS (VSS TSVs) around the VDD TSV and the signal TSV and one or more backside redistribution lines (RDLs) connecting the VSS TSVs together to form a web-like heat dissipating structure at least surrounding the VDD TSV and the signal TSV.
Public/Granted literature
- US20140264918A1 Integrated Circuit Layout Public/Granted day:2014-09-18
Information query
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