Invention Grant
- Patent Title: Method for manufacturing semiconductor devices having a metallisation layer
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Application No.: US14295791Application Date: 2014-06-04
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Publication No.: US09030028B2Publication Date: 2015-05-12
- Inventor: Rudolf Zelsacher , Paul Ganitzer
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00 ; H01L21/683 ; H01L21/78 ; H01L23/492 ; H01L23/498 ; H01L29/06 ; H01L23/31
Abstract:
A method for manufacturing semiconductor devices is disclosed. In one embodiment a semiconductor substrate having a first surface, a second surface opposite to the first surface and a plurality of semiconductor components is provided. The semiconductor substrate has a device thickness. At least one metallization layer is formed on the second surface of the semiconductor substrate. The metallization layer has a thickness which is greater than the device thickness.
Public/Granted literature
- US20140284819A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING A METALLISATION LAYER Public/Granted day:2014-09-25
Information query
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